ASTM-C863 2010

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C863-00(2010) Standard Test Method for Evaluating Oxidation Resistance of Silicon Carbide Refractories at Elevated Temperatures

Published By	Publication Date	Number of Pages
ASTM	2010	2

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Description

1.1 This test method covers the evaluation of the oxidation resistance of silicon carbide refractories at elevated temperatures in an atmosphere of steam. The steam is used to accelerate the test. Oxidation resistance is the ability of the silicon carbide (SiC) in the refractory to resist conversion to silicon dioxide (SiO ₂ ) and its attendant crystalline growth.

1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

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PDF Pages	PDF Title
1	Scope Referenced Documents Significance and Use Apparatus Test Specimen Conditions
2	Procedure Report Precision and Bias Keywords TABLE 1

Additional information

Standard Title	C863-00(2010) Standard Test Method for Evaluating Oxidation Resistance of Silicon Carbide Refractories at Elevated Temperatures
Published Code	ASTM
Publication Date	2010
Pages Count	2

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ASTM-C863 2010

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