BS EN 61709:2017

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Electric components. Reliability. Reference conditions for failure rates and stress models for conversion

Published By	Publication Date	Number of Pages
BSI	2017	126

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Description

IEC 61709:2017 is also available as /2 which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition. IEC 61709:2017 gives guidance on the use of failure rate data for reliability prediction of electric components used in equipment. The method presented in this document uses the concept of reference conditions which are the typical values of stresses that are observed by components in the majority of applications. Reference conditions are useful since they provide a known standard basis from which failure rates can be modified to account for differences in environment from the environments taken as reference conditions. Each user can use the reference conditions defined in this document or use their own. When failure rates stated at reference conditions are used it allows realistic reliability predictions to be made in the early design phase. The stress models described herein are generic and can be used as a basis for conversion of failure rate data given at these reference conditions to actual operating conditions when needed and this simplifies the prediction approach. Conversion of failure rate data is only possible within the specified functional limits of the components. This document also gives guidance on how a database of component failure data can be constructed to provide failure rates that can be used with the included stress models. Reference conditions for failure rate data are specified, so that data from different sources can be compared on a uniform basis. If failure rate data are given in accordance with this document then additional information on the specified conditions can be dispensed with. This document does not provide base failure rates for components – rather it provides models that allow failure rates obtained by other means to be converted from one operating condition to another operating condition. The prediction methodology described in this document assumes that the parts are being used within its useful life. The methods in this document have a general application but are specifically applied to a selection of component types as defined in Clauses 6 to 20 and I.2. This third edition cancels and replaces the second edition, published in 2011. This edition constitutes a technical revision. This third edition is a merger of IEC 61709:2011 and IEC TR 62380:2004. This edition includes the following significant technical changes with respect to the previous edition: addition of 4.5 Components choice, 4.6 Reliability growth during the deployment phase of new equipment, 4.7 How to use this document, and of Clause 19 Printed circuit boards (PCB) and Clause 20 Hybrid circuits with respect to IEC TR 62380; addition of failure modes of components in Annex A; modification of Annex B, Thermal model for semiconductors, adopted and revised from IEC TR 62380; modification of Annex D, Considerations on mission profile; modification of Annex E, Useful life models, adopted and revised from IEC TR 62380; revision of Annex F (former B.2.6.4), Physics of failure; addition of Annex G (former Annex C), Considerations for the design of a data base on failure rates, complemented with parts of IEC 60319; addition of Annex H, Potential sources of failure rate data and methods of selection; addition of Annex J, Presentation of component reliability data, based on IEC 60319. Keywords: failure rate data, reliability prediction of electric components

PDF Catalog

PDF Pages	PDF Title
2	National foreword
7	English CONTENTS
14	FOREWORD
16	INTRODUCTION
17	1 Scope 2 Normative references 3 Terms, definitions and symbols 3.1 Terms and definitions
21	3.2 Symbols
22	4 Context and conditions 4.1 Failure modes and mechanisms
23	4.2 Thermal modelling 4.3 Mission profile consideration 4.3.1 General 4.3.2 Operating and non-operating conditions
24	4.3.3 Dormancy 4.3.4 Storage 4.4 Environmental conditions
25	Tables Table 1 – Basic environments
26	4.5 Components choice Table 2 – Values of environmental parameters for basic environments
27	4.6 Reliability growth during the deployment phase of new equipment
28	4.7 How to use this document
29	5 Generic reference conditions and stress models 5.1 Recommended generic reference conditions Figures Figure 1 – Comparison of the temperature dependence of for CMOS IC
30	5.2 Generic stress models 5.2.1 General Table 3 – Recommended reference conditions for environmentaland mechanical stresses
31	5.2.2 Stress factor for voltage dependence, 5.2.3 Stress factor for current dependence, 5.2.4 Stress factor for temperature dependence,
33	5.2.5 Environmental application factor, 5.2.6 Dependence on switching rate, Table 4 – Environmental application factor,
34	5.2.7 Dependence on electrical stress, 5.2.8 Other factors of influence 6 Integrated semiconductor circuits 6.1 Specific reference conditions
35	Table 5 – Memory Table 6 – Microprocessors and peripherals, microcontrollers and signal processors Table 7 – Digital logic families and bus interfaces, bus driver and receiver circuits
36	6.2 Specific stress models 6.2.1 General Table 8 – Analog ICs Table 9 – Application-specific ICs (ASICs)
37	6.2.2 Voltage dependence, factor 6.2.3 Temperature dependence, factor Table 10 – Constants for voltage dependence Table 11 – Factor for digital CMOS-family ICs Table 12 – Factor for bipolar analog ICs Table 13 – Constants for temperature dependence
39	Table 14 – Factor for ICs (without EPROM; FLASH-EPROM; OTPROM; EEPROM; EAROM) Table 15 – Factor for EPROM; FLASH-EPROM; OTPROM; EEPROM; EAROM
40	7 Discrete semiconductors 7.1 Specific reference conditions Table 16 – Transistors common, low frequency Table 17 – Transistors, microwave, (e.g. RF > 800 MHz)
41	7.2 Specific stress models 7.2.1 General Table 18 – Diodes Table 19 – Power semiconductors
42	7.2.2 Voltage dependence for transistors, factor 7.2.3 Temperature dependence, factor Table 20 – Constants for voltage dependence of transistors Table 21 – Factor for transistors Table 22 – Constants for temperature dependence of discrete semiconductors
43	Table 23 – Factor for transistors, reference and microwave diodes Table 24 – Factor for diodes (without reference and microwave diodes) and power semiconductors
44	8 Optoelectronic components 8.1 Specific reference conditions Table 25 – Optoelectronic semiconductor signal receivers Table 26 – LEDs, IREDs, laser diodes and transmitter components
45	Table 27 – Optocouplers and light barriers Table 28 – Passive optical components Table 29 – Transceiver, transponder and optical sub-equipment
46	8.2 Specific stress models 8.2.1 General 8.2.2 Voltage dependence, factor 8.2.3 Current dependence, factor Table 30 – Constants for voltage dependence of phototransistors Table 31 – Factor for phototransistors
47	8.2.4 Temperature dependence, factor Table 32 – Constants for current dependence of LEDs and IREDs Table 33 – Factor for LEDs and IREDs Table 34 – Constants for temperature dependence of optoelectronic components
48	Table 35 – Factor for optical components
49	9 Capacitors 9.1 Specific reference conditions 9.2 Specific stress model 9.2.1 General 9.2.2 Voltage dependence, factor Table 36 – Capacitors
50	Table 37 – Constants for voltage dependence of capacitors Table 38 – Factor for capacitors
51	9.2.3 Temperature dependence, factor Table 39 – Constants for temperature dependence of capacitors
52	10 Resistors and resistor networks 10.1 Specific reference conditions Table 40 – Factor for capacitors
53	10.2 Specific stress models 10.2.1 General 10.2.2 Temperature dependence, factor Table 41 – Resistors and resistor networks Table 42 – Constants for temperature dependence of resistors
54	11 Inductors, transformers and coils 11.1 Reference conditions 11.2 Specific stress model 11.2.1 General 11.2.2 Temperature dependence, factor Table 43 – Factor for resistors Table 44 – Inductors, transformers and coils Table 45 – Constants for temperature dependence of inductors, transformers and coils
55	12 Microwave devices 12.1 Specific reference conditions Table 46 – Factor for inductors, transformers and coils Table 47 – Microwave devices
56	12.2 Specific stress models 13 Other passive components 13.1 Specific reference conditions 13.2 Specific stress models 14 Electrical connections 14.1 Specific reference conditions Table 48 – Other passive components
57	14.2 Specific stress models 15 Connectors and sockets 15.1 Reference conditions 15.2 Specific stress models 16 Relays 16.1 Reference conditions Table 49 – Electrical connections Table 50 – Connectors and sockets
58	16.2 Specific stress models 16.2.1 General 16.2.2 Dependence on switching rate, factor Table 51 – Relays
59	16.2.3 Dependence on electrical stress, factor Figure 2 – Selection of stress regions in accordance with current and voltage-operating conditions Table 52 – Factor for low current relays Table 53 – Factor for general purpose relays
60	16.2.4 Temperature dependence, factor 17 Switches and push-buttons 17.1 Specific reference conditions Table 54 – Factor for automotive relays Table 55 – Constants for temperature dependence of relays Table 56 – Factor for relays
61	17.2 Specific stress model 17.2.1 General 17.2.2 Dependence on electrical stress, factor Figure 3 – Selection of stress regionsin accordance with current and voltage-operating conditions Table 57 – Switches and push-buttons
62	18 Signal and pilot lamps 18.1 Specific reference conditions 18.2 Specific stress model 18.2.1 General Table 58 – Factor for switches and push-buttons for low electrical stress Table 59 – Factor for switches and push-buttons for higher electrical stress Table 60 – Signal and pilot lamps
63	18.2.2 Voltage dependence, factor 19 Printed circuit boards (PCB) 20 Hybrid circuits Table 61 – Factor for signal and pilot lamps
64	Annexes Annex A (normative) Failure modes of components Table A.1 – Failure modes: ICs (digital)
65	Table A.2 – Failure modes: transistors, diodes, optocouplers Table A.3 – Failure modes: LEDs Table A.4 – Failure modes: laser diodes and modules Table A.5 – Failure modes: photodiodes and receiver modules
66	Table A.6 – Failure modes: capacitors Table A.7 – Failure modes: resistors, inductive devices, relays
67	Annex B (informative) Thermal model for semiconductors B.1 Thermal model
68	B.2 Junction temperature calculation Figure B.1 – Temperatures inside equipment
69	B.3 Thermal resistance evaluation Figure B.2 – Thermal resistance model
70	B.4 Power dissipation of an integrated circuit P Table B.1 – Thermal resistance as a function of package type, pin number and airflow factor Table B.2 – Typical values of are
71	Table B.3 – Values of and
73	Annex C (informative) Failure rate prediction C.1 General C.2 Failure rate prediction for assemblies C.2.1 General
74	C.2.2 Assumptions and limitations C.2.3 Process for failure rate prediction
75	C.2.4 Prediction models
76	C.2.5 Other methods of reliability prediction
77	C.2.6 Validity considerations of reliability models and predictions
78	C.3 Component considerations C.3.1 Component model C.3.2 Components classification C.4 General consideration about failure rate C.4.1 General
79	C.4.2 General behaviour of the failure rate of components
80	C.4.3 Expected values of failure rate C.4.4 Sources of variation in failure rates
82	Annex D (informative) Considerations on mission profile D.1 General D.2 Dormancy
83	D.3 Mission profile
84	D.4 Example of mission profile Figure D.1 – Mission profile
85	Annex E (informative) Useful life models E.1 General E.2 Power transistors E.3 Optocouplers E.3.1 Useful life L
86	E.3.2 Factor L0 E.3.3 Factor (0
88	E.4 LED and LED modules E.4.1 Useful life L E.4.2 Factor L0
89	E.4.3 Factor (0
90	E.5 Aluminium, non-solid electrolyte capacitors
91	E.6 Relays E.7 Switches and keyboards E.8 Connectors Table E.1 – Useful life limitations for switches and keyboards
92	Annex F (informative) Physics of failure F.1 General
93	F.2 Failure mechanisms of integrated circuits Table F.1 – Failure mechanism for Integrated circuits
94	Annex G (informative) Considerations for the design of a data base on failure rates G.1 General G.2 Data collection acquisition – collection process G.3 Which data to collect and how to collect it
95	G.4 Calculation and decision making G.5 Data descriptions G.6 Identification of components G.6.1 General
96	G.6.2 Component identification G.6.3 Component technology G.7 Specification of components G.7.1 General G.7.2 Electrical specification of components
97	G.7.3 Environmental specification of components G.8 Field related issues data G.8.1 General G.8.2 Actual field conditions G.8.3 Data on field failures
98	G.9 Test related issues data G.9.1 General G.9.2 Actual test conditions G.9.3 Data on test failures
99	G.10 Failure rate database attributes
100	Table G.1 – Reliability prediction database attributes
101	Annex H (informative) Potential sources of failure rate data and methods of selection H.1 General H.2 Data source selection
102	H.3 User data H.4 Manufacturer’s data
103	H.5 Handbook reliability data H.5.1 General H.5.2 Using handbook data with this document
104	H.5.3 List of available handbooks Table H.1 – Result of calculation for transistors common, low frequency Table H.2 – Sources of reliability data (in alphabetical order)
107	Annex I (informative) Overview of component classification I.1 General I.2 The IEC 61360 system
108	Table I.1 – Classification tree (IEC 61360-4)
115	I.3 Other systems I.3.1 General I.3.2 NATO stock numbers I.3.3 UNSPSC codes I.3.4 STEP/EXPRESS I.3.5 IECQ
116	I.3.6 ECALS I.3.7 ISO 13584 I.3.8 MIL specifications
117	Annex J (informative) Presentation of component reliability data J.1 General J.2 Identification of components J.2.1 General
118	J.2.2 Component identification J.2.3 Component technology J.3 Specification of components J.3.1 General J.3.2 Electrical specification of components J.3.3 Environmental specification of components J.4 Test related issues data J.4.1 General
119	J.4.2 Actual test conditions J.5 Data on test failures
121	Annex K (informative) Examples K.1 Integrated circuit K.2 Transistor K.3 Capacitor
122	K.4 Relay
123	Bibliography

Additional information

Status	Under Review
Pages	126
Publication Date	2017-08-08
ISBN	978 0 580 87539 7
Standard Number	BS EN 61709:2017
Title	Electric components. Reliability. Reference conditions for failure rates and stress models for conversion
Identical National Standard Of	EN 61709:2017, IEC 61709:2017, EN 62059-32-1:2012
Replaces	BS EN 61709:2011
Descriptors	Inductors, Switches, Electric coils, Transformers, Resistors, Capacitors, Diodes, Relays, Indicator lights, Integrated circuits, Optoelectronic devices, Semiconductor devices, Mathematical calculations, Environment (working), Stress, Failure (quality control), Reliability, Electronic equipment and components
Publisher	BSI
Committee	DS/1
ICS Codes	31.020 - Electronic components in general

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