BS EN IEC 63215-2:2023
$142.49
Endurance test methods for die attach materials – Temperature cycling test method for die attach materials applied to discrete type power electronic devices
Published By | Publication Date | Number of Pages |
BSI | 2023 | 28 |
PDF Catalog
PDF Pages | PDF Title |
---|---|
2 | undefined |
5 | Annex ZA (normative)Normative references to international publicationswith their corresponding European publications |
6 | English CONTENTS |
8 | FOREWORD |
10 | 1 Scope 2 Normative references |
11 | 3 Terms, definitions and abbreviated terms 3.1 Terms and definitions 3.2 Abbreviated terms 4 General |
12 | 5 Test apparatus 5.1 Die bonding equipment 5.2 Temperature cycling chamber 5.3 Thermal resistance measuring equipment 5.4 Ultrasonic flaw inspection equipment 6 Specimen 6.1 General Figures Figure 1 – Regions for evaluation for discrete type power electronic device |
13 | 6.2 Preparation of specimen 7 Evaluation test 7.1 Test method 7.1.1 General 7.1.2 Temperature cycling test Figure 2 – Temperature cycling test |
14 | 7.1.3 Test conditions 7.1.4 End of test criteria 7.2 Inspection and measurement 7.2.1 Visual inspection 7.2.2 Thermal resistance measurement Tables Table 1 – Temperature cycling test conditions |
15 | 7.2.3 Ultrasonic flaw inspection 7.3 Test procedure 7.3.1 Test preparation 7.3.2 Preconditioning 7.3.3 Initial measurement 7.3.4 Test 7.3.5 Intermediate measurement 7.3.6 Post-test treatment 7.3.7 Final judgment |
16 | 8 Failure cycle 9 Items to be specified in the product specification |
17 | Annex A (normative)Thermal resistance measuring method at die attach region A.1 Thermal resistance measuring method A.1.1 General A.1.2 Temperature characteristics measurement for TEG chip Figure A.1 – Example of the structure of the specimen using a TEG chip |
18 | A.1.3 Thermal resistance measurement method for TEG chip Figure A.2 – Example of temperature characteristics – TEG chip |
19 | A.2 Correction of thermal resistance criteria Figure A.3 – Example of structure for thermal resistance measurementfor a power electronic device |
20 | Figure A.4 – Example of relationship between thermal resistance and die attach damage Table A.1 – Example of thermal resistance value (Rth) result |
21 | Figure A.5 – Example of ultrasonic flaw inspection result |
22 | Annex B (informative)Discrete type specimen preparation using a heating resistor TEG chip B.1 Power electronic device specimen B.1.1 General B.1.2 Power electronic device chip B.1.3 Base substrate Figure B.1 – Example of TEG chip |
23 | B.1.4 Package mould B.1.5 Surface treatment B.2 Die attach materials B.3 Specimen preparation |
24 | Figure B.2 – Typical reflow soldering profile for Sn96,5Ag3Cu,5 solder alloy |
25 | Figure B.3 – Example of specimen – TEG chip |
26 | Annex C (informative)Reliability performance index for die attach joint –Discrete type power electronic device Table C.1 – Reliability performance index for die attach joint –Discrete type power electronic device |
27 | Bibliography |