BS ISO 14706:2014
$167.15
Surface chemical analysis. Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
| Published By | Publication Date | Number of Pages |
| BSI | 2014 | 36 |
This International Standard specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces.
The method is applicable to the following:
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elements of atomic number from 16 (S) to 92 (U);
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contamination elements with atomic surface densities from 1 × 1010 atoms/cm2 to 1 × 1014 atoms/cm2;
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contamination elements with atomic surface densities from 5 × 108 atoms/cm2 to 5 × 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method (see 3.4).
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 6 | Foreword |
| 7 | Introduction |
| 9 | Section sec_1 Section sec_2 Section sec_3 Section sec_3.1 Section sec_3.2 Section sec_3.3 1 Scope 2 Normative reference 3 Terms and definitions |
| 10 | Section sec_3.4 Section sec_3.5 Section sec_4 Section sec_5 4 Abbreviated terms 5 Principle |
| 11 | Section sec_6 Section sec_6.1 Section sec_6.2 Section sec_6.3 Section sec_6.4 Section sec_6.5 Section sec_7 Section sec_7.1 Section sec_7.2 Section sec_8 Section sec_8.1 Section sec_8.2 Section sec_8.3 Section sec_8.4 Section sec_8.5 Section sec_8.6 6 Apparatus 7 Environment for specimen preparation and measurement 8 Calibration reference materials |
| 12 | Section sec_9 Section sec_10 Section sec_10.1 Section sec_10.1.1 Section sec_10.1.2 Section sec_10.1.3 Section sec_10.1.4 Section sec_10.1.5 Section sec_10.1.6 Section sec_10.2 Section sec_10.2.1 Section sec_10.2.2 9 Safety 10 Measurement procedure 10.1 Preparation for measurement 10.2 Preparing a calibration curve |
| 13 | Section sec_10.2.3 Section sec_10.2.4 Section sec_10.2.5 Section sec_10.3 Section sec_10.3.1 Section sec_10.3.2 Section sec_11 Section sec_11.1 10.3 Measurement of a test specimen 11 Expression of results 11.1 Method of calculation |
| 14 | Section sec_11.2 Section sec_12 Section sec_13 11.2 Blank correction 12 Precision 13 Test report |
| 16 | Annex sec_A Annex sec_A.1 Annex sec_A.2 Annex sec_A.3 Annex sec_A.4 Annex sec_A.5 Annex sec_A.6 Annex sec_A.7 Annex sec_A.8 Annex A (informative) Reference materials |
| 17 | Annex sec_B Annex sec_B.1 Table tab_c Figure fig_B.1 Annex B (informative) Relative sensitivity factor |
| 19 | Annex sec_B.2 Annex sec_B.3 Table tab_B.1 Table tab_B.2 |
| 20 | Annex sec_B.4 Annex sec_B.5 Annex sec_B.6 |
| 21 | Annex sec_C Annex sec_C.1 Annex sec_C.2 Annex sec_C.3 Annex C (informative) Preparation of reference materials[6] |
| 22 | Annex sec_C.4 Annex sec_C.4.1 Annex sec_C.4.2 Annex sec_C.4.3 Annex sec_C.5 |
| 23 | Annex sec_C.6 Annex sec_C.7 Annex sec_C.8 |
| 24 | Annex sec_D Annex sec_D.1 Annex sec_D.2 Annex sec_D.3 Annex sec_D.4 Annex sec_D.4.1 Annex sec_D.4.2 Annex D (informative) VPD-TXRF method |
| 25 | Annex sec_D.4.3 |
| 26 | Annex sec_E Annex sec_E.1 Annex E (informative) Glancing-angle settings |
| 27 | Table tab_g Figure fig_E.1 Annex sec_E.2 |
| 28 | Table tab_h Figure fig_E.2 Figure fig_E.3 Annex sec_E.3 |
| 29 | Figure fig_E.4 Annex sec_E.4 |
| 30 | Annex sec_F Annex sec_F.1 Annex sec_F.2 Table tab_F.1 Annex sec_F.3 Annex F (informative) International inter-laboratory test results |
| 31 | Annex sec_F.4 Annex sec_F.4.1 Annex sec_F.4.2 Annex sec_F.4.3 Annex sec_F.5 Annex sec_F.5.1 Table tab_F.2 Annex sec_F.5.2 |
| 32 | Table tab_F.3 |
| 33 | Reference ref_1 Reference ref_2 Reference ref_3 Reference ref_4 Reference ref_5 Reference ref_6 Reference ref_7 Reference ref_8 Reference ref_9 Reference ref_10 Reference ref_11 Reference ref_12 Reference ref_13 Reference ref_14 Reference ref_15 Bibliography |
