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BSI PD IEC TS 63109:2022

BSI PD IEC TS 63109:2022

$142.49

Photovoltaic (PV) modules and cells. Measurement of diode ideality factor by quantitative analysis of electroluminescence images

Published By Publication Date Number of Pages
BSI 2022 32
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PDF Catalog

PDF Pages PDF Title
2 undefined
4 CONTENTS
6 FOREWORD
8 INTRODUCTION
9 1 Scope
2 Normative references
3 Terms and definitions
10 4 Procedures for quantitative analysis of EL intensity
4.1 General
11 4.2 Samples
4.3 Apparatus
4.4 EL image capturing and camera calibration
4.5 Procedures of analysing data to derive n values (refer to Annex A)
5 Measurement report
12 Figures
Figure 1 – Scheme for labeling position of cells in a module viewedfrom the light-facing side according to coordinates (i,j)
13 Annex A (normative)EL intensity dependence on the injection current
A.1 General
A.2 Derivation of diode ideality factor
14 Figure A.1 – Electroluminescence intensity dependence on injection current
15 Annex B (informative)Examples of measurements of diode ideality factor n
B.1 General
B.2 Examples of n value of cells
B.2.1 Example 1 – Module without defect
Figure B.1 – EL image (module without defect)
16 Figure B.2 – EL intensity dependence on injection current (module without defect)
Table B.1 – Performance of module without defect (module A) (at STC)
17 B.2.2 Module with defect
Figure B.3 – EL image (aged module)
Figure B.4 – EL intensity dependence on injection current (aged module)
18 Figure B.5 – Diode ideality factor n of 3,F
Table B.2 – Performance of aged module (module B) (at STC)
19 Figure B.6 – EL image (defective module)
Figure B.7 – EL intensity dependence on injection current (defective module)
20 Figure B.8 – Diode ideality factor n of 4,E
Table B.3 – Performance of PID module (at STC)
21 Annex C (informative)Diode ideality factor n as an indicator of the output performance of PV modules – Measurement using proposed single diode model
C.1 General
22 C.2 Practical single diode model
Figure C.1 – Equivalent circuit model in dark considering series resistance Rs and shunt resistance Rsh
Figure C.2 – Equivalent circuit model in dark for the practical single diode model
23 Figure C.3 – Schematic I-V characteristic in dark using linear coordinates
Figure C.4 – Schematic I-V characteristic in dark using semi-logarithmic scales
25 Figure C.5 – Equivalent circuit model under photo irradiationconsidering series resistance Rs
Figure C.6 – Equivalent circuit model under photo irradiationfor practical single diode model
26 Figure C.7 – Photo response showing Iph – Vph characteristic flowing through the load
27 Figure C.8 – Diode current as a function of the diode voltage
Figure C.9 – Semi-logarithmic plot of diode current versus diode voltage
28 C.3 Concise derivation method of n using photo response parameters
Figure C.10 – Schematic consideration of photo-responsechange with increasing the diode ideality factor n
30 Bibliography

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BSI PD IEC TS 63109:2022
$142.49