| PDF Pages<\/th>\n | PDF Title<\/th>\n<\/tr>\n | ||||||
|---|---|---|---|---|---|---|---|
| 3<\/td>\n | TitlePage – Surface chemical analysis\ufffd\u2014 Secondary-ion mass spectrometry\ufffd\u2014 Method for depth profil… <\/td>\n<\/tr>\n | ||||||
| 5<\/td>\n | TableofContent – Contents Page <\/td>\n<\/tr>\n | ||||||
| 6<\/td>\n | Foreword – Foreword <\/td>\n<\/tr>\n | ||||||
| 7<\/td>\n | Introduction – Introduction <\/td>\n<\/tr>\n | ||||||
| 9<\/td>\n | Scope – 1\ufffd\ufffd\ufffd Scope NormativeReference – 2\ufffd\ufffd\ufffd Normative reference Clause1 – 3\ufffd\ufffd\ufffd Symbols and abbreviated terms <\/td>\n<\/tr>\n | ||||||
| 10<\/td>\n | Clause1 – 4\ufffd\ufffd\ufffd Principle Clause1 – 5\ufffd\ufffd\ufffd Reference materials Subclause2 – 5.1\ufffd\ufffd\ufffd Reference materials for determination of relative-sensitivity factors Subclause2 – 5.2\ufffd\ufffd\ufffd Reference materials for calibration of depth scale Clause1 – 6\ufffd\ufffd\ufffd Apparatus Subclause2 – 6.1\ufffd\ufffd\ufffd Secondary-ion mass spectrometer Subclause2 – 6.2\ufffd\ufffd\ufffd Stylus profilometer Subclause2 – 6.3\ufffd\ufffd\ufffd Optical interferometer <\/td>\n<\/tr>\n | ||||||
| 11<\/td>\n | Clause1 – 7\ufffd\ufffd\ufffd Specimen Clause1 – 8\ufffd\ufffd\ufffd Procedures Subclause2 – 8.1\ufffd\ufffd\ufffd Adjustment of secondary-ion mass spectrometer UntitledSubclause3 – 8.1.1\ufffd\ufffd\ufffd For oxygen-ion beam use, see UntitledSubclause3 – 8.1.2\ufffd\ufffd\ufffd For the primary-ion beam, the beam current and scan region can be v… Subclause2 – 8.2\ufffd\ufffd\ufffd Optimizing the secondary-ion mass spectrometer settings UntitledSubclause3 – 8.2.1\ufffd\ufffd\ufffd Set the required instrument parameters and align the ion optics in … UntitledSubclause3 – 8.2.2\ufffd\ufffd\ufffd Ensure the stability of the primary-ion current and the mass spectr… UntitledSubclause3 – 8.2.3\ufffd\ufffd\ufffd For a mass spectrometer whose transmission can be varied, use the s… <\/td>\n<\/tr>\n | ||||||
| 12<\/td>\n | Subclause2 – 8.3\ufffd\ufffd\ufffd Specimen introduction Subclause2 – 8.4\ufffd\ufffd\ufffd Detected ions UntitledSubclause3 – 8.4.1\ufffd\ufffd\ufffd When an oxygen-ion beam is used, both UntitledSubclause3 – 8.4.2\ufffd\ufffd\ufffd The ion species of silicon which has an appropriate ion intensity s… Subclause2 – 8.5\ufffd\ufffd\ufffd Measurement of test specimen UntitledSubclause3 – 8.5.1\ufffd\ufffd\ufffd Measurements shall be made in the central region of the specimen ho… UntitledSubclause3 – 8.5.2\ufffd\ufffd\ufffd The primary-ion beam current and the beam scan area shall be chosen… UntitledSubclause3 – 8.5.3\ufffd\ufffd\ufffd The secondary-ion intensities of boron and silicon shall be measure… <\/td>\n<\/tr>\n | ||||||
| 13<\/td>\n | Subclause2 – 8.6\ufffd\ufffd\ufffd Calibration Subclause3 – 8.6.1\ufffd\ufffd\ufffd Determination of relative-sensitivity factor Subclause3 – 8.6.2\ufffd\ufffd\ufffd Calibration of depth scale by stylus profilometry UntitledSubclause4 – 8.6.2.1\ufffd\ufffd\ufffd Calibrate the stylus profilometer for crater depth measurements u… UntitledSubclause4 – 8.6.2.2\ufffd\ufffd\ufffd Measure the crater depth Subclause3 – 8.6.3\ufffd\ufffd\ufffd Calibration of depth scale by optical interferometry UntitledSubclause4 – 8.6.3.1\ufffd\ufffd\ufffd Measure the crater depth UntitledSubclause4 – 8.6.3.2\ufffd\ufffd\ufffd Detailed procedures for measurement of interference fringes shall… UntitledSubclause4 – 8.6.3.3\ufffd\ufffd\ufffd The crater depth shall be obtained using the following formula: <\/td>\n<\/tr>\n | ||||||
| 14<\/td>\n | Clause1 – 9\ufffd\ufffd\ufffd Expression of results UntitledSubclause2 – 9.1\ufffd\ufffd\ufffd Ion intensity ratios of boron to silicon shall be determined for each… UntitledSubclause2 – 9.2\ufffd\ufffd\ufffd The boron atomic concentration of the test specimen shall be determin… UntitledSubclause2 – 9.3\ufffd\ufffd\ufffd When necessary, the background intensity of boron shall be subtracted… UntitledSubclause2 – 9.4\ufffd\ufffd\ufffd The depth for measurement cycle UntitledSubclause2 – 9.5\ufffd\ufffd\ufffd When the total number of measurement cycles UntitledSubclause2 – 9.6\ufffd\ufffd\ufffd When graphical expression of the results is necessary, Clause1 – 10\ufffd\ufffd\ufffd Test report <\/td>\n<\/tr>\n | ||||||
| 16<\/td>\n | AnnexInformative – Statistical report of stylus profilometry measurements Clause1 – A.1\ufffd\ufffd\ufffd Introduction Clause1 – A.2\ufffd\ufffd\ufffd Design of test programme Clause1 – A.3\ufffd\ufffd\ufffd Test specimen Clause1 – A.4\ufffd\ufffd\ufffd Procedure of stylus measurement Clause1 – A.5\ufffd\ufffd\ufffd Statistical procedures Subclause2 – A.5.1\ufffd\ufffd\ufffd Scrutiny for consistency and outliers Subclause2 – A.5.2\ufffd\ufffd\ufffd Computation of repeatability and reproducibility <\/td>\n<\/tr>\n | ||||||
| 17<\/td>\n | Clause1 – A.6\ufffd\ufffd\ufffd Results of statistical analysis UntitledSubclause2 – A.6.1\ufffd\ufffd\ufffd The results of the statistical analysis are given in <\/td>\n<\/tr>\n | ||||||
| 18<\/td>\n | Bibliography – Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon<\/b><\/p>\n |