This part of IEC 60747 defines the terms, definitions, configuration, and test methods can be used to evaluate and determine the performance characteristics of surface acoustic wavebased semiconductor sensors integrated with ultraviolet, illuminance, and temperature sensors. The measurement methods are for DC characteristics and RF characteristics, and the measurement method for RF characteristics includes a direct mode and differential amplifier mode based on feedback oscillation. This document excludes devices dealt with by TC 49: piezoelectric, dielectric and electrostatic devices and associated materials for frequency control, selection and detection.<\/p>\n
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| 2<\/td>\n | undefined <\/td>\n<\/tr>\n | ||||||
| 4<\/td>\n | CONTENTS <\/td>\n<\/tr>\n | ||||||
| 6<\/td>\n | FOREWORD <\/td>\n<\/tr>\n | ||||||
| 8<\/td>\n | 1 Scope 2 Normative references 3 Terms and definitions 3.1 General terms <\/td>\n<\/tr>\n | ||||||
| 9<\/td>\n | 3.2 SAW-based integrated light sensors 3.3 Characteristics parameters Figures Figure 1 \u2013 Configuration of an interdigital transducer (IDT) <\/td>\n<\/tr>\n | ||||||
| 10<\/td>\n | 4 Device structure and characteristics 4.1 General 4.2 Device structure 4.2.1 SAW based resonator type light-sensor elements <\/td>\n<\/tr>\n | ||||||
| 11<\/td>\n | 4.2.2 SAW-based delay line type light sensor elements 4.3 Characteristics of integrated UV and visible-light sensors Figure 2 \u2013 Conceptual diagram for SAW-based resonator type light-sensor elements Figure 3 \u2013 Conceptual diagram for SAW-based delay line type light sensor elements <\/td>\n<\/tr>\n | ||||||
| 12<\/td>\n | 4.4 Key points of integrated UV and visible-light sensors 4.4.1 UV sensitive layer 4.4.2 Visible-light sensitive layer 5 Test conditions 5.1 Test environmental conditions Figure 4 \u2013 Conceptual diagram for integrated multi UV and visible-light sensors <\/td>\n<\/tr>\n | ||||||
| 13<\/td>\n | 5.2 Darkroom condition 5.3 Setup conditions 5.3.1 Starting conditions of test 5.3.2 Conditions of UV and visible light measurement equipment 6 Test methods 6.1 General <\/td>\n<\/tr>\n | ||||||
| 14<\/td>\n | 6.2 Test methods of DC-characteristics for the light sensor element Figure 5 \u2013 Measurement procedure for the semiconductor light sensor <\/td>\n<\/tr>\n | ||||||
| 15<\/td>\n | Figure 6 \u2013 Test setup to measure the I-V characteristics of semiconductor light sensor Figure 7 \u2013 Example of I-V characteristics of a UV sensor element as a function of UV intensity <\/td>\n<\/tr>\n | ||||||
| 16<\/td>\n | 6.3 Test methods of RF characteristics for integrated light sensors 6.3.1 Direct mode 6.3.2 Differential amplifier mode Figure 8 \u2013 Test setup to measure the frequency shift of semiconductor light sensor <\/td>\n<\/tr>\n | ||||||
| 18<\/td>\n | Figure 9 \u2013 Differential amplifier mode method <\/td>\n<\/tr>\n | ||||||
| 19<\/td>\n | Figure 10 \u2013 Measurement results of UV and visible-light sensors using differential amplifier mode <\/td>\n<\/tr>\n | ||||||
| 20<\/td>\n | Annex A (informative)Ultraviolet and visible light characteristics of the sensitive layer Figure A.1 \u2013 Operation principle of the ZnO sensitive layer for UV sensing <\/td>\n<\/tr>\n | ||||||
| 21<\/td>\n | Figure A.2 \u2013 Operation principle in terms of band theory <\/td>\n<\/tr>\n | ||||||
| 22<\/td>\n | Annex B (informative)Hysteresis of frequency shift according to the on\/off state light condition Figure B.1 \u2013 Hysteresis of the frequency shift under optimal light conditions <\/td>\n<\/tr>\n | ||||||
| 23<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Semiconductor devices – Semiconductor sensors. Test method of surface acoustic wave-based integrated sensors for measuring ultraviolet, illumination and temperature<\/b><\/p>\n |